Proportional band(P) 0.1 to 999.9℃/℉
Integral time(I) 0 to 9999 sec
Derivative time(D) 0 to 9999 sec
Control period(T) 0.5 to 120.0 sec
Manual reset 0.0 to 100.0%
Sampling period 50ms
Dielectric strength
3,000VAC 50/60Hz for 1 min (between primary circuit
and secondary circuit)
Vibration
0.75mm amplitude at frequency 5 to 55Hz (for 1 min) in
each X, Y, Z direction for 2 hours
Relay life cycle
Mechanical OUT, AL1/2: min 5,000,000 operations
Electrical OUT, AL1/2: min 200,000 (250VAC 3A resistance load)
Insulation resistance Min. 100MΩ (at 500VDC megger)
Noise resistance
Square shaped noise by noise simulator (pulse width 1)
±2kV R-phase, S-phase
Memory retention
Approx. 10 years (non-volatile semiconductor memory
type)
Environment
Ambient temp. -10 to 50℃, storage: -20 to 60℃
Ambient humi. 35 to 85%RH, storage: 35 to 85%RH
Protection structure IP50 (front panel, IEC standards)
Insulation type
Double insulation (mark: , dielectric strength between
primary circuit and secondary circuit: 3kV)
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