Dell POWEREDGE R515 - DIMM Slots; Speed

Dell
32
PowerEdge R515 Technical Guide
6.3 DIMM Slots
The DDR3 memory interface consists of two memory channels per processor socket. Each channel supports
up to two RDIMMs for single/dual/quad rank or two UDIMMs. Population order is identified by the silkscreen
designator and the System Information Label (SIL) located on the chassis cover.
The following DIMM population rules apply:
 Support for 1600MT/s dual rank DIMMs (the 4200 and 4300 series process runs at 1600MT/s; the 4100
series processor runs at 1333MT/s)
 2 channels, up to 2 DIMMs per channel
 Support for 1333 MT/s single and dual-rank DIMMs and 1066 MT/s quad-rank DIMMs
The following is not supported:
 Mixing of RDIMMs and UDIMMs
 Use of non-ECC UDIMMs
For more information on memory configuration, see the System Memory section in the Installing System
Components chapter in the PowerEdge R515 Hardware Owner’s Manual on Dell.com/Support/Manuals.
6.4 Speed
The memory frequency is determined by a variety of inputs:
 Speed of the DIMMs
 Speed supported by the CPU
 Configuration of the DIMMs
4100 series CPU Memory Speed Limitations
 The memory speed of each channel depends on the memory configuration:
 For single rank memory modules:
 One memory module per channel supports up to 1333MT/s
 Two memory modules per channel supports up to 1333MT/s
 For dual-rank memory modules:
 One memory module per channel supports up to 1333MT/s
 Two memory modules per channel supports up to 1066MT/s
 For quad-rank memory modules:
 One memory module per channel supports up to 1066MT/s
 Two memory modules per channel supports up to 800MT/s (667MT/s for LV DIMM)
 If memory modules with different speeds are installed, they will operate at the speed of the slowest
 installed memory module(s).
4200/4300 series CPU Memory Speed Limitations
 The memory speed of each channel depends on the memory configuration:
 For single rank memory modules:
 One memory module per channel supports up to 1600MT/s (1.5V) or 1333MT/s (1.35V)
 Two memory modules per channel supports up to 1600MT/s (1.5V) or 1333MT/s (1.35V)
 For dual-rank memory modules: