Heart Interface HF12-1200 - Page 18

lnbmational
@ffi
PD.9.510C
tRFZ44
nexfEfo
Power
MOSFET
.
Dynaffic dvidt Rating
|
175"C Operating
Temperitr.rre
.
Fast
Switching
o
Easa ol Paralleling
o
Simple Drive Requirementrs
Ileacription
Third
Generation HEXFETS
from lnternatonal
Rectitid
provide
lhe
dedgner
with the best
combinatlon ol
fast
oadtching, ruggedized
device design, low
on-rE6i€tance
and cosl-off€clivon€ss.
Ths
TG220
packags
ls univercally
prefened
lor all
commercial-induetrial
applklaiims at
powsr
dissapation levels lo approximately
5O watts.
The low
thermal resistance and lo{y
packago
cost of
the
TG220
contrbute
tc
its
wide
acceptance
throughout
the indu$lry.
Voss
=
60V
Roslon;
=
0'028o
lo
=
50*A
TO-"20A8
Absolute
Maxlm um
Hatlngs
Paraffleter
Max.
Ur$16
lo
@
Tc=
25'C Conlinuous
Drain Cunent.
Vaq
@ 10 V
50"
A
lo@ Tc=
10fC Oontinuous
Draln Cuffent,Vcs@
10V
3€
lnM
Pulsed
D€in Cunent O
200
Po@Tc=25oC
Fow6r Dissioation
150
W
Linear
oeratinq Fador
1.0
wlc
Vcs Gat€-lo-Sourcs
Votlage
*20
v
EAs
glngle
Pulse Avahnche
Energy @
100
mJ
dv/d
P€ak Diode Rocoverydv/dl
@
4.s
Vfrs
T,r
Tsrc
Operating Junction
and
'
-55
to
+175
Storaqe
T€mDerafu re
Banoe
"c
Soldedng Tempeftrbre,
for 10
s€conds
900
(t.6mm
ffffi
6asel
MountingTorqu€,6.32orM3screw
;
10bf.in{1.11',1.m}
Thermal
Resistanee
Parameler
Min.
Typ
Max.
Uniis
R*c
Junction-to-Cas€
1_O
"cth/
Fscs
Ca6€-lo-Sink, Flat,
Greassd
Surfacs
0.50
Junction-to.Ambi6nt
02