LG 32LE7500 - Page 36

TH E S Y MB OL M AR K OF T HI S S CH EM ET IC D IA G R A M IN CO RP OR AT E S
SP EC IA L F EA TU RE S IM PORT AN T F OR P RO TE CT IO N F RO M X- RA DI AT I O N .
FI LR E A N D E LE CT RI CA L SH OC K H AZ AR DS , WH EN S E RV IC IN G IF I S
ES SE NT I A L T HA T ON LY MAN UF A T U RE S SP EC FI ED P A RT S BE U SE D F O R
TH E CR I T I CA L CO MP ON ENTS I N T HE SY MB OL M A RK O F TH E SC H E M ET IC .
+3 . 5 V _S T
R8 2 0 6
3. 3K
O P T
R8 28 0
10 K
OP T
Q8 20 2
2S C3 0 5 2
CO MM E RC IA L_ E U
E
B
C
C8 20 9
10 00 p F
50 V
IR _O U T
L8 20 0
BL M1 8P G 12 1S N 1D
+3 .5 V _S T
LE D_ B/ L G_ L O G O
R8 21 2
0
CO M M E RC I AL _ U S
R8 20 4
47 K
+3 .5 V_ S T
R8 2 1 3
10 K
1%
R 8 20 8
22
WI RE L E S S
C8 20 7
0. 1 u F
LE D _ R /B U ZZ
C8 21 0
0. 1u F
16 V
R8 22 4
10 0
R8 2 0 9
10 0
R8 21 8
47 K
CO MM ER C IA L
L 8 20 1
BL M1 8P G 12 1S N 1D
P8 20 0
12 50 7W R -1 2 L
1
2
3
4
5
6
7
8
9
1 0
1 1
1 2
13
R8 21 9
47 K
WI RE L ES S
R8 21 6
10 K
CO MM ER C IA L_ EU
R8 20 1
0
OP T
R8 21 7
10 K
WI RE L ES S
D8 20 5
5. 6V
CD S3 C0 5 HD M I 1
C 8 20 6
0 . 1u F
R8 2 1 5
4 7 K
WI RE L E S S
C8 21 2
10 0p F
50 V
IR _P A SS
R8 22 5
10 0
EY E Q
D8 20 1
5. 6V
AM OT E CH
+3 .5 V _S T
+3 .5 V_ S T
C8 21 4
10 00 pF
50 V
OP T
L8 20 3
BL M 1 8 PG 1 21 S N 1 D
R8 2 1 0
10 0
Q8 20 4
2S C3 0 52
CO M M E RC I AL
E
B
C
R8 22 6
10 0
EY E Q
KE Y2
+3 .5 V _S T
+ 3 .5 V _S T
Q8 20 5
2S C3 0 52
W I RE L ES S
E
B
C
D8 20 4
5. 6V
CD S3 C 05 HD MI 1
IR
C8 21 3
10 00 pF
50 V
OP T
R 8 22 1
47 K
W I RE L ES S
C8 2 0 8
0. 1 u F
1 6 V
R8 22 7 1 .5 K
TA CT _K E Y
R 8 20 7
22
CO MM E RC I AL
+ 3 .5 V _S T
D8 20 0
5. 6 V
AM OT E CH
R8 2 1 4
4 7 K
CO M M E RC I AL _ E U
Q8 20 1
2S C3 05 2
E
B
C
R8 2 0 0
2 2
Q8 20 3
2S C3 0 5 2
WI RE L ES S
E
B
C
R 8 20 5
4 7 K
R 8 22 0
47 K
CO M M E RC I AL
R8 20 2
47 K
C8 21 1
10 00 p F
50 V
R 8 20 3
10 K
D 8 20 6
5 . 6V
AM OT EC H
R 8 27 6
1. 5K
KE Y1
+3 .5 V _S T
R8 2 1 1
10 K
1%
+3 . 3 V _N O RM A L
Q8 20 0
2S C3 0 52
E
B
C
L8 20 2
BL M1 8P G 12 1 S N 1D
NE C_ E EP R OM_ S CL
NE C_ E EP R OM_ S DA
D 8 20 9 5 . 6V
JK 8 2 0 0
XR JV - 01 V -D1 2 -1 8 0
1
2
3
4
5
6
7
8
D1
D2
D3
D4
9
L8 2 0 4
C I C2 1 J5 0 1 N E
D8 21 2 5. 6V
D8 21 1 5. 6V
D8 20 7 5. 6V
EP HY _ T D N
D8 20 8 5. 6V
EP HY _ AC T IVI T Y
R8 28 1 5 10
C8 21 6
10 00 p F
50 V
EP HY _L I NK
D3 .3 V
R8 28 2 5 10
D 8 21 0 5 . 6V
EP HY _ RD P
EP HY _ R D N
C8 21 7
10 00 p F
EP HY _ T D P
B C M_ R XD 1
+3 . 5 V _S T
+3 . 5 V _S T
R8 22 3
4. 7K
OP T
R8 27 2
0
R8 27 4
0
C8 20 1
0. 1u F
C8 20 2
0. 1u F
C8 20 4
0. 1u F
R8 27 5
0
JK 82 0 1
SP G0 9 -D B -00 9
1
2
3
4
5
6
7
8
9
1 0
R8 22 2
4. 7K
OP T
C8 20 0 0. 3 3u F
R8 27 3 0
IR _O UT
R8 27 7
10 0
C8 2 0 5
0. 1 u F
C8 20 3
0. 1u F
N E C_ R XD
D8 20 3
30 V
CD S3 C 30 GT H
D8 20 2
30 V
CD S3 C3 0 GT H
IC 82 00
MA X 3 2 32 C DR
EA N4 1 3 4 8 20 1
3
C1 -
2
V+
4
C2 +
1
C1 +
6
V-
5
C2 -
7
DO UT 2
8
RI N2
9
RO UT 2
10
DI N2
11
DI N1
12
RO UT 1
13
RI N1
14
DO UT 1
15
GN D
16
VC C
R8 27 8
10 0
R8 27 9
0
OP T
A2 .5 V
B C M_ T XD 1
NE C_ TX D
R8 28 3
0
R8 2 8 4
0
R8 2 8 5
0
R8 2 8 6
0
C8 21 8
10 pF
50 V
OP T
C8 22 0
10 pF
50 V
OP T
C8 2 2 2
10 p F
50 V
OP T
C8 2 2 1
10 p F
5 0 V
OP T
R8 28 7
10 K
LD 65 0 /L D7 50
Zener Diode is
CO MM E RCI AL
W IRE LES S
close to wafer
IR & KEY
RS232C
Ad jac ent TX /RX diffe rential pai rs sh ou ld be separat ed by more th an
15 mi ls to eac h othe r
ETH ERN ET CONN ECT
5 mils tr ace w idt h w ith 7 m ils ai r g ap o n P/N pair .
Trace im peda nce : 100 ohm dif fer enc tial impe dan ce to GN D pl ane