NXP Semiconductors MPC5777M - Page 163

Document revision history
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 163
4 9/2014
Electrical characteristics—I/O pad current specification
• Table 14 (WEAK configuration output buffer electrical characteristics), R
OH_W
and
R
OL_W
: changed min value to 517 (was 560) and max value to 1052 (was 1040).
• Table 15 (MEDIUM configuration output buffer electrical characteristics), R
OH_M
and
R
OL_M
: changed min value to 135 (was 140).
• Table 16 (STRONG configuration output buffer electrical characteristics), R
OH_S
and
R
OL_S
: changed min value to 30 (was 35) and max value to 77 (was 65).
• Table 17 (VERY STRONG configuration output buffer electrical characteristics),
revised R
OH_V
and R
OL_V
conditions.
• Table 17 (VERY STRONG configuration output buffer electrical characteristics), R
OH_V
and R
OL_V
: changed max values to 72 (was 60) and 90 (was 75).
• Table 18 (EBI pad output electrical specification), R
OH_EBI_GPIO
and R
OL_EBI_GPIO
:
changed max value to 400 (was 260).
•In Table 18 (EBI pad output electrical specification): V
IHCMOS_H_EBI
specification:
changed max value to “V
DD_HV_IO_EBI
+ 0.3” (was “V
DD_HV_IO
+ 0.3”). R
OH_EBI_GPIO
specification: changed condition to “4.5 V < V
DD_HV_IO_EBI
< 5.5 V” (was “3.0 V <
V
DD_HV_IO
< 3.6 V”). R
OL_EBI_GPIO
specification: changed condition to “4.5 V <
V
DD_HV_IO_EBI
< 5.5 V” (was “3.0 V < V
DD_HV_IO
< 3.6 V”).
Electrical characteristics—Oscillator and FMPLL
•In Table 23 (External Oscillator electrical specifications), deleted the transconductance
specification (g
m
).
Electrical characteristics—ADC specifications
• Table 26 (ADC pin specification), I
LK_INUD
specification: changed T
J
< 40 °C condition
max value to 50 nA (was 70). Changed T
J
< 150 °C condition max value to 150 nA (was
220).
•In Table 27 (SARn ADC electrical specification): added condition rows for full and fast
precharge to t
ADCPRECH
, revised condition entries for V
PRECH.
•In Table 28 (SDn ADC electrical specification), changed the max value for t
LATENCY
at
HPF = OFF (was 2*
GROUP
,, is 
GROUP
).
•In Table 28 (SDn ADC electrical specification), changed the max value for GAIN (was
15, is 16).
• Table 28 (SDn ADC electrical specification), SNR
SE150
: changed GAIN=1 min value to
72 (was 74), GAIN=2 min value to 69 (was 71), GAIN=4 min value to 66 (was 68),
GAIN=8 min value to 63 (was 65), and GAIN=16 min value to 60 (was 62).
• Table 28 (SDn ADC electrical specification), 
GROUP
specification: changed OSR = 75
max value to 696 Tclk (was 746), changed OSR = 96 max value to 946.5 Tclk (was
946.4).
•In Table 28 (SDn ADC electrical specification), added footnote to parameter column for
t
LATENCY
.
Electrical characteristics—Power management: PMC, POR/LVD, sequencing
•In Section 3.16, Power management: PMC, POR/LVD, sequencing, replaced PMC
operating conditions and external regulators supply voltage table with a cross
reference to Table 8 (Device operating conditions).
•In Table 35 (Device power supply integration), changed minimum VDD_LV external
capacitance footnote to “variation over voltage, temperature, and aging” (was
“variation over process, voltage, temperature, and aging.”)
•In Table 36 (Flash power supply), revised table footnotes and added new “After
trimming; 25°C < TJ  150°C” condition to V
DD_HV_FLA
.
Table 76. Revision history (continued)
Revision Date Description of changes