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Samsung SCX-5312F - Page 129

Samsung SCX-5312F
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3-12
CIRCUIT DESCRIPTION
Samsung Electronics
Repair Manual
3-2-5 DRAM CONTROL
1) DEVICE
TYPE NO..................................K4E6411D EDO TYPE
CAPACITY................................4MBYTES (1M*16BITS*2)
2) OPERATING PRINCIPLE
DRAM can either read or write. The data can be stored in the DRAM only when the power is on. It stores data white the CPU
processes data. The address to read and write the data is specified by RAS SIGNAL and CAS SIGNAL. DRAMWE*SIGNAL
is activated when writing data and DRAMOE*SIGNAL, when reading. You can expand up to 64MBYTE of DRAM in this sys-
tem.
0
x0
0
000
00
0xf f f f f f f
bank3 Next
bank3 Base
bank2 Next
bank2 Base
bank1 Next
bank1 Base
bank0 Next
bank0 Base
<DRAM Bank Configuration>

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