6 Memory
6.1 Flash Ccf-V: Flash memory cell Control Gate to Floating Gate capacitance
(A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the Control Gate to Floating Gate capacitance (Ccf), and plots the Ccf-V characteristics.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Flash memory cell
Connect the Control Gate to CMU High and the Floating Gate to CMU Low.
Connect the other terminals to the ground unit (GNDU).
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
M: Number of cells connected in parallel. M=1 for the single cell.
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
ControlGate: CMU connected between Control Gate and Floating Gate (CV sweep measurement)
VcfStart: DC bias start voltage
VcfStop: DC bias stop voltage
VcfStep: DC bias step voltage
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
[User Function]
PI=3.141592653589
D=G/(2*PI*FREQ*Cp)
Rp=1/G
Cs=(1+D^2)*Cp
X=-1/(2*PI*FREQ*Cs)
Rs=D*abs(X)
Agilent EasyEXPERT Application Library Reference, Edition 8
6-4
To Next Page
Loading...