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General| Brand | Agilent Technologies |
|---|---|
| Model | EasyEXPERT |
| Category | Software |
| Language | English |
The material contained in this document is provided "as is," and is subject to being changed without notice.
The hardware and/or software described in this document are furnished under a license and may be used or copied only in accordance with the terms of such license.
If software is for use in the performance of a U.S. Government prime contract or subcontract, Software is delivered and licensed as “Commercial computer software”.
Base-Collector junction forward characteristics.
Base-Collector junction breakdown voltage.
Ic-Vc characteristics with Ib sweep.
Base resistance (flyback method, 4-terminal).
Breakdown voltage between source and drain.
Cgb-f characteristics.
Id-Vd characteristics, SMU Pulse.
On current, off current, and subthreshold slope.
Bipolar transistor gummel characteristics.
Diode forward bias characteristics.
MOSFET Id-Vd characteristics.
C-f characteristics of capacitor (2 terminals).
Id-Vds characteristics, SMU Pulse.
Id-Vgs characteristics, MCSMU Pulse.
Flash memory cell Control Gate to Floating Gate capacitance.
Tests write/erase on NAND flash memory cell, plots writes/erases vs threshold voltage.
Measures Id-Vg characteristics, performs erase, measures Id-Vg again.
Performs data disturb test on NOR flash memory cell after erase.
Measures BJT varactor capacitance and calculates differences between devices.
Measures MIM capacitor capacitance and calculates differences.
Measures drain current vs drain voltage characteristics of two MOSFETs.
Measures conductance of a CNT 2-terminal device and plots differential R-V characteristics.
Evaluates drain current vs time for gate condition change.
Measures I-V characteristics of a CNT 2-terminal device.
Measures voltage vs. current characteristics of a 2-terminal device.
Measures breakdown voltage between source and drain of a power MOSFET.
Id-Vd characteristics (3-terminal), SMU Pulse.
Extracts threshold voltage using extrapolation in the linear region of Id-Vg.
Performs reverse bias stress test on BJT, plots stress time vs current/amplification factor.
Performs bias temperature instability test, plots stress time vs threshold voltage/drain current.
Performs electromigration test, plots stress time vs resistance characteristics.
Performs TDDB test, plots stress time vs leak current.
Measures MOSFET Id-Vg characteristics and extracts threshold voltage.
Measures anode-cathode capacitance vs signal level.
Measures forward bias anode voltage vs anode current characteristics.
Measures capacitance vs frequency and makes Nyquist plot.
Performs SPGU output setup and measurement.
Measures drain current vs drain voltage characteristics using pulsed gate and drain voltage.
Extracts gate current vs gate voltage characteristics of MOS capacitor.
Cgb-f characteristics, 2 terminals.
Measures junction capacitance and plots Cj-V characteristics.
Measures junction device reverse bias characteristics and extracts breakdown voltage.
Measures resistance vs current characteristics using Kelvin connection.
Measures sheet resistance and plots it vs input current.
Measures drain current vs drain voltage characteristic of TFT.
Measures drain current vs gate voltage characteristics of TFT.
Sets Output1 of Agilent 81110A Pulse Generator and triggers it.
Measures offset capacitance of cables and DUT interface using QSCV method.
Performs capacitance vs DC bias voltage measurement using Agilent 4284A/E4980A LCR meter.
Performs bias temperature instability test with AC stress, plots accumulated stress time vs drain current.
Performs bias temperature instability test with DC stress, plots accumulated stress time vs threshold voltage.
Measures drain current vs drain voltage characteristics of MOSFET using RSU.
Measures current or voltage with Ch1 sweeping dc output, and Ch2 constant output.
Measures drain current vs drain voltage characteristics of MOSFET using WGFMU.
Measures drain current vs gate voltage characteristics of MOSFET using WGFMU pulse.
Measures Current Collapse of GaN Diode.
Measures Current Collapse of GaN FET.
Measures Current Collapse of GaN FET.
Measures Collector-Emitter capacitance and plots Cce-Vc characteristics.
Measures collector current vs collector-emitter voltage in cutoff region.
Measures Collector-Emitter saturation voltage characteristics.
Measures residual resistance vs current characteristics.
Measures MISCAP Gate current vs voltage and extracts Gate-Body breakdown voltage.
Measures MISCAP Gate-Body capacitance and plots C-V characteristics.
Measures MISCAP I-V characteristics and extracts Gate-Body breakdown voltage.
Measures Collector current vs Collector-Base voltage characteristics.
Measures Ic-Vce characteristics, SMU Pulse.
Measures Emitter current vs Emitter-Base voltage and extracts breakdown voltage.
Measures junction capacitance by reverse bias and plots Cj-Vr characteristics.
Measures forward bias voltage vs current characteristics using SMU voltage pulse.
Measures reverse bias anode voltage vs anode current characteristics.
Measures Drain-Source capacitance and plots Cds-Vd characteristics.
Measures Gate-Drain capacitance and plots Cgd-Vd characteristics.
Measures and plots Drain current vs Drain voltage characteristics in cutoff region.
Measures Id-Vg characteristics and extracts threshold or cutoff voltage.
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