2 CMOS
2.14 Id-Vd pulse: Id-Vd characteristics, SMU Pulse (A.01.11)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the drain current vs drain voltage characteristics of MOSFET. SMU pulse output is used for
applying the drain voltage.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Drain: SMU connected to Drain terminal, primary sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
PulsePeriod: Pulse period
PulseWidth: Pulse width
Gate: SMU connected to Gate terminal, secondary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
IgLimit: Gate current compliance
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
IsubsLimit: Substrate current compliance
Source: SMU connected to Source terminal, constant voltage output
[Extended Test Parameters]
Vs: Source voltage
BaseValue: Pulse base voltage
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Drain current Idrain
[User Function]
IdrainPerWg: Drain current per unit gate width IdrainPerWg=Idrain/Wg
[X-Y Plot]
X axis: Drain voltage Vdrain (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)
[List Display]
Drain current per unit gate width IdrainPerWg
Agilent EasyEXPERT Application Library Reference, Edition 8
2-27