Agilent Technologies EasyEXPERT

2 CMOS
2.13 IdRdsGds: Drain resistance/conductance (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Extracts the early voltage, drain resistance, and drain conductance from the drain current vs drain voltage
characteristics of MOSFET.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Drain: SMU connected to Drain terminal, primary sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
Gate: SMU connected to Gate terminal, secondary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
Source: SMU connected to Source terminal, constant voltage output
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Gate current compliance
IsubsLimit: Substrate current compliance
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
[Measurement Parameters]
Drain current Idrain
Drain resistance Rds
Early voltage VA
Drain conductance gds
[User Function]
gds=diff(Idrain,Vdrain)
Rds=1/gds
VA=Rds*abs(Idrain)-abs(Vdrain)
[X-Y Plot]
X axis: Drain voltage Vdrain (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)
Y2 axis: Drain resistance Rds (LOG)
Y3 axis: Early voltage VA (LINEAR)
[List Display]
Drain conductance gds
Agilent EasyEXPERT Application Library Reference, Edition 8
2-26