Agilent Technologies EasyEXPERT - Page 185

6 Memory
6.21 NandFlash3 WordDisturb(ErasedCell): NAND flash memory cell erase-
disturb test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the erase-disturb test of the NAND-type flash memory cell, and plots the accumulated stress time vs
threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 2 set or HRSMU/ASU 3 set)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Psource: SPGU channel connected to Drain, Source, and Substrate via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
VgStress: Stress voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalStressTime: Total accumulated stress time
CheckNoOfTimes: Number of Vth measurement operation
PulsePeriod: Erase pulse period
PulseDelay: Erase pulse delay
PulseWidth: Erase pulse width
Verase: Erase pulse output level
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
[Extended Test Parameter]
Vs: Source voltage
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
BaseValue: Erase pulse base value
NoOfPulse: Number of output pulses for the erase operation
DrainMinRng: Minimum range of drain current measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
6-45