6 Memory
6.22 NandFlash3 WordDisturb(WrittenCell): NAND flash memory cell read-
disturb test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the read-disturb test of the NAND-type flash memory cell, and plots the accumulated stress time vs
threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 1 set or HRSMU/ASU 1 set)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
VgStress: Stress voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalStressTime: Total accumulated stress time
CheckNoOfTimes: Number of Vth measurement operation
PulsePeriod: Write pulse period
PulseDelay: Write pulse delay
PulseWidth: Total accumulated pulse width
Vwrite: Write pulse output level
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
BaseValue: Write pulse base value
NoOfPulse: Number of output pulses for the erase operation
DrainMinRng: Minimum range of drain current measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
6-47
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