1 BJT
1.7 CS Diode Fwd: Collector-Substrate junction forward characteristics
(A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the Collector-Substrate junction forward characteristics of BJT. Base and Emitter are opened.
[Device Under Test]
Bipolar transistor, 4 terminals
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Lc: Collector length
Wc: Collector width
Temp: Temperature
Imax: Current compliance
[Test Parameters]
IntegTime: Integration time
Subs: SMU connected to Substrate, primary sweep voltage output
VsubsStart: Sweep start voltage for Substrate
VsubsStop: Sweep stop voltage for Substrate
VsubsStep: Sweep step voltage for Substrate
Collector: SMU connected to Collector terminal, constant voltage output
[Extended Test Parameters]
Vc: Collector voltage
HoldTime: Hold time
DelayTime: Delay time
CollectorMinRng: Minimum range for the collector current measurement
SubsMinRng: Minimum range for the substrate current measurement
[Measurement Parameters]
Substrate current Isubs
Collector current Icollector
[User Function]
IcPerArea=Icollector/Lc/Wc
IsubsPerArea=Isubs/Lc/Wc
[X-Y Plot]
X axis: Substrate voltage Vsubs (LINEAR)
Y1 axis: Substrate current Isubs (LINEAR)
Y2 axis: Substrate current Isubs (LOG)
Y3 axis: Collector current Icollector (LINEAR)
Y4 axis: Collector current Icollector (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
1-9