Agilent Technologies EasyEXPERT

8 NanoTech
8.2 CNT Gate Leak: CNT FET Ig-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the gate current vs gate voltage (Ig-Vg) characteristics of CNT FET.
Measures Ig before and after applying Vg by using the primary sweep SMU that forces the start and stop
voltages only, and extracts the Ig-Vg characteristics by altering the stop value repeatedly.
[Device Under Test]
Carbon Nano Tube FET capacitor, 2 terminals
Connect SMU to the back gate and side gate and make the source and drain open.
[Device Parameters]
Polarity: Forward (SMUs force the specified value) or Reverse (SMUs force the negative specified value)
L: CNT length
D: CNT diameter
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
BackGate: SMU connected to Back Gate terminal, primary sweep voltage output
SideGate: SMU connected to Side Gate terminal, constant voltage output
VbgStart: Pulse peak start (sweep start) voltage for Back Gate terminal
VbgStop: Pulse peak stop (sweep stop) voltage for Back Gate terminal
VbgStep: Pulse peak step (sweep step) voltage for Back Gate terminal
VbgLow: Pulse base voltage (primary sweep start voltage)
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
Vsg: Side Gate terminal voltage
IbgLimit: Back Gate current compliance
BackGateMinRng: Minimum range for Back Gate current measurement
SideGateMinRng: Minimum range for Side Gate current measurement
[Measurement Parameters]
Ibackgate: Back Gate current
[X-Y Plot]
X axis: Back Gate voltage Vbackgate (LINEAR)
Y1 axis: Back Gate current Ibackgate (LOG)
[List Display]
Vbackgate: Back Gate voltage
Ibackgate: Back Gate current
[Test Output: X-Y Graph]
X axis: Back Gate voltage Vbackgate (LINEAR)
Y1 axis: Back Gate current Ibackgate (LOG)
Y2 axis: Back Gate current with pulse base voltage applied Ibackgate@LowVbg (LOG)
[Test Output: List Display]
Agilent EasyEXPERT Application Library Reference, Edition 8
8-4