11 Reliability
1. BJT EB RevStress 3devices:
Emitter-Base junction Reverse bias Stress test, 4 terminals, 3 devices (A.01.20)
2. BJT EB RevStress 3devices[3]:
Emitter-Base junction Reverse bias Stress test, 3 terminals, 3 devices (A.01.20)
3. BJT EB RevStress: Emitter-Base junction Reverse bias Stress test, 4 terminals (A.01.20)
4. BJT EB RevStress2: Emitter-Base junction Reverse bias Stress test, 4 terminals (A.03.10)
5. BJT EB RevStress[3]: Emitter-Base junction Reverse bias Stress test, 3 terminals (A.01.20)
6. BJT EB RevStress2[3]: Emitter-Base junction Reverse bias Stress test, 3 terminals (A.03.10)
7. BTI 3devices: Bias Temperature Instability test, 4 terminals, 3 devices (A.01.20)
8. BTI 3devices[3]: Bias Temperature Instability test, 3 terminals, 3 devices (A.01.20)
9. BTI: Bias Temperature Instability test, 4 terminals (A.01.20)
10. BTI2: Bias Temperature Instability test, 4 terminals (A.03.10)
11. BTI[3]: Bias Temperature Instability test, 3 terminals (A.01.20)
12. BTI2[3]: Bias Temperature Instability test, 3 terminals (A.03.10)
13. Charge Pumping: Evaluation of the interface state using charge pumping method (A.01.20)
14. Charge Pumping2: Evaluation of the interface state using charge pumping method (A.03.10)
15. EM Istress: Electromigration test, current stressed, 4 SMUs (A.01.20)
16. EM Istress2: Electromigration test, current stressed, 4 SMUs (A.03.10)
17. EM Istress[2]: Electromigration test, current stressed, 2 SMUs (A.01.20)
18. EM Istress2[2]: Electromigration test, current stressed, 2 SMUs (A.03.10)
19. EM Istress[6]: Electromigration test, current stressed, 6 SMUs (A.01.20)
20. EM Istress2[6]: Electromigration test, current stressed, 6 SMUs (A.03.10)
21. EM Vstress: Electromigration test, voltage stressed, 4 SMUs (A.01.20)
22. EM Vstress2: Electromigration test, voltage stressed, 4 SMUs (A.03.10)
23. EM Vstress[2]: Electromigration test, voltage stressed, 2 SMUs (A.01.20)
24. EM Vstress2[2]: Electromigration test, voltage stressed, 2 SMUs (A.03.10)
25. EM Vstress[6]: Electromigration test, voltage stressed, 6 SMUs (A.01.20)
26. EM Vstress2[6]: Electromigration test, voltage stressed, 6 SMUs (A.03.10)
27. HCI 3devices: Hot Carrier Injection test, 4 terminals, 3 devices (A.01.20)
28. HCI: Hot Carrier Injection test, 4 terminals (A.01.20)
29. HCI2: Hot Carrier Injection test, 4 terminals (A.03.10)
30. J-Ramp: Insulator lifetime evaluation, current stressed (A.01.20)
31. TDDB Istress 3devices: TDDB Test, current stressed, 3 devices (A.01.20)
32. TDDB Istress2 3devices: TDDB Test, current stressed, 3 devices (A.03.10)
33. TDDB Istress: TDDB Test, current stressed (A.01.20)
34. TDDB Istress2: TDDB Test, current stressed (A.03.10)
35. TDDB Vstress 3devices: TDDB Test, voltage stressed, 3 devices (A.01.20)
36. TDDB Vstress2 3devices: TDDB Test, voltage stressed, 3 devices (A.03.10)
37. TDDB Vstress: TDDB Test, voltage stressed (A.01.20)
38. TDDB Vstress2: TDDB Test, voltage stressed (A.03.10)
39. Timing On-the-fly NBTI Timing On-the-fly NBTI Test (A.03.11)
40. Timing On-the-fly NBTI –Mch
Negative Bias Temperature Instability Test (A.05.03)
41. TZDB: TZDB Test of oxide layer (A.01.20)
42. V-Ramp: Insulator lifetime evaluation, voltage stressed (A.01.20)
Agilent EasyEXPERT Application Library Reference, Edition 8
11-2
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