11 Reliability
11.5 BJT EB RevStress[3]: Emitter-Base junction Reverse bias Stress test, 3
terminals (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the bipolar transistor Emitter-Base junction reverse bias stress test, and plots the accumulated stress
time vs collector current/base current/current amplification factor characteristics.
This test is performed as follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
Bipolar transistor, 3 terminals
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value)
Le: Emitter length
We: Emitter width
Temp: Temperature (deg C)
IcMax: Maximum collector current value
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
TotalStressTime: Total stress time
Collector: SMU connected to Collector terminal, constant voltage output
Base: SMU connected to Base terminal, constant voltage output
Emitter: SMU connected to Emitter terminal, primary sweep voltage output
[Test Parameters for Sampling_Stress]
VeStress: Stress voltage for Emitter terminal
[Test Parameters for IvSweep_hfe]
Ic@hfe: Collector current determining the hfe
VbStart: Sweep start voltage for Base terminal
VbStop: Sweep stop voltage for Base terminal
VbStep: Sweep step voltage for Base terminal
Vc: Collector voltage
[Extended Test Parameters]
[Extended Test Parameters for Sampling_Stress]
IeStressLimit: Emitter current compliance
VbStress: Stress voltage for Base terminal
VcStress: Stress voltage for Collector terminal
[Extended Test Parameters for IvSweep_hfe]
HoldTime: Hold time
DelayTime: Delay time
BaseMinRng: Minimum range for base current measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
11-14
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