11 Reliability
11.30 J-Ramp: Insulator lifetime evaluation, current stressed (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the time vs current/voltage characteristics with current stress, and extracts the lifetime of the gate
oxide, insulator and so on.
[Device Under Test]
MOS capacitor, oxide layer, insulator and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
TimeMax: Maximum value of X axis
Gate: SMU connected to Gate, primary sweep, current output
IgStart: Sweep start current
IgStop: Sweep stop current
VgLimit: Gate voltage compliance
Subs: SMU connected to Substrate, constant voltage output
[Extended Test Parameters]
Vsubs: Substrate voltage
HoldTime: Hold time
DelayTime: Delay time
SubsMinRng: Minimum range for the substrate current measurement
[User Function]
IgatePerArea=Igate/Lg/Wg
IsubsPerArea=Isubs/Lg/Wg
Qbdi=integ(Igate,Time)/Lg/Wg
[Test Output: X-Y Graph]
X axis: Time stamp TimeList (LINEAR)
Y1 axis: Gate current IgateList (LOG)
Y2 axis: Gate voltage VgateList (LINEAR)
[Test Output: List Display]
Time stamp TimeList
Gate current IgateList
Gate voltage VgateList
[Test Output: Parameters]
Breakdown voltage Vbd
Time to breakdown Tbd
Charge to breakdown Qbd
Agilent EasyEXPERT Application Library Reference, Edition 8
11-73
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