1 BJT
1.14 EB Diode Rev: Emitter-Base junction reverse characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the Emitter-Base junction reverse characteristics of BJT. Collector and Substrate are opened.
[Device Under Test]
Bipolar transistor
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Le: Emitter length
We: Emitter width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Emitter: SMU connected to Emitter terminal, primary sweep voltage output
VeStart: Sweep start voltage for Emitter terminal
VeStop: Sweep stop voltage for Emitter terminal
VeStep: Sweep step voltage for Emitter terminal
IeLimit: Emitter current compliance
Base: SMU connected to Base terminal, constant voltage output
[Extended Test Parameters]
Vb: Base voltage
HoldTime: Hold time
DelayTime: Delay time
EmitterMinRng: Minimum range for the emitter current measurement
BaseMinRng: Minimum range for the base current measurement
[Measurement Parameters]
Emitter current Iemitter
Base current Ibase
[User Function]
IePerArea=Iemitter/Le/We
IbPerArea=Ibase/Le/We
[X-Y Plot]
X axis: Emitter voltage Vemitter (LINEAR)
Y1 axis: Emitter current Iemitter (LOG)
Y2 axis: Base current Ibase (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
1-20
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