11 Reliability
11.32 TDDB Istress2 3devices: TDDB Test, current stressed, 3 devices (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the TDDB (time dependent dielectric breakdown) test, and plots the stress time vs voltage
characteristics. This test is performed by the sampling measurement mode. This test also supports 3-device
connection.
[Device Under Test]
MOS capacitor, insulator, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
L: Length of pattern
W: Width of pattern
Temp: Temperature
[Test Parameters]
Port1: SMU connected to Port1 terminal
Port2: SMU connected to Port2 terminal
Port3: SMU connected to Port3 terminal
Port4: SMU connected to Port4 terminal
TotalStressTime: Total stress time.
I1Stress: Port1 stress current
I2Stress: Port2 stress current
I3Stress: Port3 stress current
IntegTime: Integration time
PointPerDecade: Number of samples in 1 decade
Interval: Sampling interval
FailureCondition: Measurement stop condition
[Extended Test Parameters]
V4: Port4 terminal voltage
V1Limit: Port1/Port2/Port3 voltage compliance
I4Limit: Port4 current compliance
HoldTime: Hold time
Port4MinRng: Minimum range for the port4 current measurement
StoringRuntimeData: Data save during stress output, Yes or No
[Measurement Parameters]
Port1 voltage Vport1
Port2 voltage Vport2
Port3 voltage Vport3
[User Function]
IPort1PerArea=Iport1/L/W
IPort2PerArea=Iport2/L/W
IPort3PerArea=Iport3/L/W
IPort4PerArea=Iport4/L/W
[X-Y Graph]
X axis: Stress time Time (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
11-76
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