Agilent Technologies EasyEXPERT - Page 362

11 Reliability
11.33 TDDB Istress: TDDB Test, current stressed (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the TDDB (time dependent dielectric breakdown) test, and plots the stress time vs voltage
characteristics. This test is performed by the sampling measurement mode.
[Device Under Test]
MOS capacitor, insulator, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
L: Port1 terminal length
W: Port1 terminal width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
TotalStressTime: Total stress time. 10 to 10000 seconds.
NoOfSamples: Number of samples
Port1: SMU connected to Port1 terminal
I1Stress: Port1 stress current
Port2: SMU connected to Port2 terminal
[Extended Test Parameters]
V2: Port2 terminal voltage
V1Limit: Port1 voltage compliance
I2Limit: Port2 current compliance
HoldTime: Hold time
Port2MinRng: Minimum range for the port2 current measurement
[User Function]
I1PerArea=Iport1/L/W
I2PerArea=Iport2/L/W
[Test Output: X-Y Graph]
X axis: Stress time TimeList (LOG)
Y1 axis: Port1 terminal voltage Vport1List (LINEAR)
[Test Output: List Display]
Stress time TimeList
Port1 terminal voltage Vport1List
[Test Output: Parameters]
Breakdown voltage Vbd
Time to breakdown Tbd
Charge to breakdown Qbd
[Qbd calculation]
Qbd=I1Stress*Tbd/L/W
Agilent EasyEXPERT Application Library Reference, Edition 8
11-78