11 Reliability
11.38 TDDB Vstress2: TDDB Test, voltage stressed (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the TDDB (time dependent dielectric breakdown) test, and plots the stress time vs current
characteristics. This test is performed by the sampling measurement mode.
[Device Under Test]
MOS capacitor, insulator, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
L: Port1 terminal length
W: Port1 terminal width
Temp: Temperature
[Test Parameters]
Port1: SMU connected to Port1 terminal
Port2: SMU connected to Port2 terminal
TotalStressTime: Total stress time. 10 to 10000 seconds.
FailureCondition: Port1 terminal current to decide the breakdown
V1Stress: Port1 stress voltage
IntegTime: Integration time
PointPerDecade: Number of samples in 1 decade
Interval: Sampling interval
[Extended Test Parameters]
V2: Port2 terminal voltage
I1Limit: Current compliance
HoldTime: Hold time
Port1MinRng: Minimum range for the port1 current measurement
StoringRuntimeData: Data save during stress output, Yes or No
[Measurement Parameters]
Port1 current Iport1
[User Function]
IPort1PerArea=Iport1/L/W
IPort2PerArea=Iport2/L/W
Qbdval=integ(Iport1,Time)/L/W
[X-Y Graph]
X axis: Stress time Time (LOG)
Y1 axis: Port1 current Iport1 (LOG)
[List Display]
Stress time Time
Port1 current Iport1
[Test Output: X-Y Graph]
X axis: Stress time TimeList (LOG)
Y1 axis: Port1 current Iport1List (LOG)
[Test Output: List Display]
Stress time TimeList
Port1 current Iport1List
Charge to breakdown QbdList
[Test Output: Parameters]
Time to breakdown Tbd
Charge to breakdown Qbd
Agilent EasyEXPERT Application Library Reference, Edition 8
11-86
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