20 GaN Diode
20.2 Diode Current Collapse Signal Monitor: GaN Diode Current Collapse
characteristics (using N1267A) (A.05.03)
[Supported Analyzer]
B1505A
[Description]
Measures Current Collapse of GaN Diode.
On state current, voltage and resistance after off state are measured by pulse and signal monitor using N1267A.
[Device Under Test]
GaN Diode, 3 terminals
[Device Parameters]
Temp: Temperature
RAxisMin: Y axis (R) minimum value
RAxisMax: Y axis (R) maximum value
VAxisMin: Y axis (V) minimum value
VAxisMax: Y axis (V) maximum value
IAxisMin: Y axis (I) minimum value
IAxisMax: Y axis (I) maximum value
[Test Parameters]
Memo: Memorandum
GNDU: GNDU connected to N1267A GNDU input
HVSMU: HVSMU connected to N1267A HVSMU input
HCSMU: HCSMU connected to N1267A HCSMU input
SwitchControl: MCSMU connected to N1267A Switch Control
Substrate: SMU/GNDU connected to Substrate
VOff: Cathode voltage applied while off state
VOn: Cathode voltage applied while on state (Voltage drops insIe of N1267A according to on state current)
IOnLimit: Current compliance for on state
OffStressTime: Duration of VOff application
OnTime: Duration of VOn application
[Extended Test Parameters]
MonitorStartTime: Time offset from turning DUT on to starting signal monitor
MonitorDuration: Duration of signal monitor
IOffLimit: Current compliance for off state(AUTO: 8mA for VOff up to 1500V, 4mA for VOff above 3kV)
VOnHoldTime: Hold time of VOn output by HCSMU before turning DUT on
TimeAxisScale: Option for scale of X axis (Time)
VerboseDataStore: Option for saving data of the embedded classic test setup
[Measurement Parameters]
Time: On state time
V_HCSMU: Voltage measured by HCSMU
I_HCSMU: Current measured by HCSMU
V: Voltage measured by HVSMU
I_HVSMU: Current measured by HVSMU
Vsw: Voltage measured by Switch Control MCSMU
I_SwitchControl: Current measured by Switch Control MCSMU
[User Function]
Agilent EasyEXPERT Application Library Reference, Edition 8
20-5