Agilent Technologies EasyEXPERT

21 GaN FET
[Measurement Parameters]
Time: On state time
V_HCSMU: Voltage measured by HCSMU
I_HCSMU: Current measured by HCSMU
Vds: Voltage measured by HVSMU
I_HVSMU: Current measured by HVSMU
V_SwitchControl: Voltage measured by Switch Control MCSMU
I_SwitchControl: Current measured by Switch Control MCSMU
Vgs: Gate voltage
Ig: Gate current
[User Function]
Id: Drain current (= I_HCSMU + I_HVSMU)
Rds: Drain-Source resistance (= Vds / Id)
Ta: Temperature (= Temp)
[X-Y Plot]
X axis: Time
Y1 axis: Rds
Y2 axis: Vds
Y3 axis: Id
Y4 axis: Vgs
[List Display]
Time
Rds
Vds
Id
Vgs
Ig
V_HCSMU
I_HCSMU
I_HVSMU
V_SwitchControl
I_SwitchControl
[Parameter Display Area]
Ta
Agilent EasyEXPERT Application Library Reference, Edition 8
21-8