2 CMOS
2.2 BVgso: Breakdown voltage between gate and source (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the breakdown voltage between gate and source of MOSFET when drain is opened.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Is@BVgso: Source current to decide the breakdown
Gate: SMU connected to Gate, primary sweep voltage output
VgStart: Sweep start voltage for Gate
VgStop: Sweep stop voltage for Gate
VgStep: Sweep step voltage for Gate
Subs: SMU connected to Substrate, constant voltage output
Source: SMU connected to Source, constant voltage output
[Extended Test Parameters]
Vsubs: Substrate voltage
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum range for the gate current measurement
SourceMinRng: Minimum range for the source current measurement
SubsMinRng: Minimum range for the substrate current measurement
[Measurement Parameters]
Source current Isource
Gate current Igate
Substrate current Isubs
For the all terminals, the SMU current compliance is set to Is@BVgso*1.1.
[User Function]
Gate current per Gate unit area IgatePerGateArea=Igate/Lg/Wg
[Analysis Function]
BVgso=@L1X (X intercept of Line1)
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Source current Isource (LOG)
Y2 axis: Gate current Igate (LOG)
[List Display]
Substrate current Isubs
[Parameters Display Area]
Breakdown voltage between gate and source BVgso
[Auto Analysis]
Line1: Vertical line through Y1 data at Isource=Is@BVgso
Agilent EasyEXPERT Application Library Reference, Edition 8
2-5