2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3423
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
AUDIO FREQUENCY AMPLIFIER APPLICATION.
FEATURES
High Breakdown Voltage : V
CEO
=150V(Min.).
Low Output Capacitance : C
ob
=5.0pF(Max.).
High Transition Frequency : f
T
=120MHz(Typ.).
Complementary to KTA1360.
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140, Y:120 240
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
150 V
Collector-Emitter Voltage
V
CEO
150 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
50 mA
Emitter Current
I
B
5 mA
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
5
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=150V, I
E
=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
- - 0.1
A
DC Current Gain
h
FE
(Note) V
CE
=5V, I
C
=10mA
70 - 240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
- - 0.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=10mA, I
B
=1mA
- - 1.0 V
Transition Frequency
f
T
V
CE
=30V, I
C
=10mA
- 120 - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- 3.5 5.0 pF