©
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA672T
N-CHANNEL MOS FET ARRAY
FOR SWITCHING
The
µ
PA672T is a super-mini-mold device provided
with two MOS FET elements. It achieves high-density
mounting and saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
SC-70
• Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Drain to Source Voltage VDSS 50 V
Gate to Source Voltage VGSS ±7.0 V
Drain Current (DC) ID(DC) 100 mA
Drain Current (pulse) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % 200 mA
Total Power Dissipation PT 200 (Total) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. G11259EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in millimeters)
0.2
+0.1
–0
0.15
+0.1
–0.05
2.1 ±0.1
1.25 ±0.1
0.65
1.3
0.7
2.0 ±0.2
0.9 ±0.1
0 to 0.1
0.65
6
1
5
2
4
3
PIN CONNECTION
654
123
1.
2.
3.
4.
5.
6.
Marking: MA
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
(S1)
(G1)
(D2)
(S2)
(G2)
(D1)
AVR 360/230 Service Manual
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