Making a Measurement
In this section, you learn how to execute the measurements with an
HP 4155A/4156A and to display the measurement results graphically.
Id-Vg measurement of a MOS FET is provided as an example.You learn
step-by-step how to perform this measurement.
You measure the device under test (DUT) by using the measurement circuit as
shown in the following diagram. SMU2 and SMU3 sweep the same voltage to
the gate and drain. SMU3 measures the drain current (Id). The source and
substrate are connected to circuit common.
You should get result similar to the following gure
. Gate voltage
Vg
(swept
from 0 V to 2 V) is assigned to X axis
,
p
Id
is assigned to Y1 axis, and
@
@V g
p
Id
is assigned to Y2 axis.
3
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