HP 5245L - Page 64

Model 5245L
Section IV
Table 4-1
Table
4-1.
Reference
Desig;nation
Index
(Cont'd)
Reterence
Desisnation
@
ftock No.
Description
#
Note
A l8Rt8
A
t8Rt9
A 18R40
a
l8R4
t
A
18R42
A
l8R4t
A
18R44
A
18R45
A
18R46
A
18R47
A
18R48
A
18R49
Atsvt
A19
Ar9Cl
A
t9e2
A l9Ct
A
t9C4
A
tec5
A
t9e6
A
r9C7
A
l9C8
A
l9C9
A
19e lo
A
tecR I
A
t9CR2
A
l9CRt
A
tgcR4
A
lge
R5
A t9CR6
A
lecRT
At90t
A
r902
A
l90t
A1904
A
1905
A
1906
AI9RI
A
I9R2
A
I9R'
A
T9R4
A
T9R5
A
I9R6
A
T9R7
A
I9R8
A
I9R9
0683-9105
o6et-?525
0683-
t045
068t-2025
o68r-7525
068t-
1545
068t-5r55
068t-9105
o6et-7525
068t-
1O45
o5245-6014
03245-2014
ot60-0r27
or50-0095
o
t50-oo42
ol50-oo95
ol50-oo9,
ot50-oo7t
0160-0r27
ot50-oo95
or50-006t
o
r50-oo9t
lgOl-O145
t90
l-0040
l9Ol-O145
t90t-oo40
t902-0580
l90t-OO4O
l90
l-OO4O
1855-OO16
1854-O249
I
853-OO
I 5
t
851-OO
I
5
1854-OOO9
r854-0009
o757-O898
o757-O92q
o757-O9rt8
o757-0950
0757-094O
0737-Oe52
0757-0909
0757-O9t2
075?-O9t6
Rf
FXO COl.rP
9lO
oHM 5$
L/i4VI
NOT
ASSTGNEO
RrFXg
COI{P 75OO
OHMS
5ft
L/4W
RrFXO
COMP
IOOK
OHil
5S
L/ttY
RsFX9
COMP
2OOO
OHM
5S
L/ttVt
RrFXD COMP
7500 oHMS
55 L/4v
RrFXB
COHP t50K
oHM
5g
L/IV|
RIFXD
COMP
5IK
OHM
5X
L/4IT
R|FXB
COirP
910
oHt{
5r L/4U
NOT
ISSIGNEO
RrFxO
COMP 7500 oHMS
5S
L/i4Vt
RIFXD COl|lP IOOK oHM
5g
L/4Y
NSR
PART
OF
READOUT
BLOCK
ASSY.
BOARO
ASSY
I
INPUT
AIIPLIFIER
BOARO'BLANK
PC
c
rFxo
eER ruF
20r
zsvDct
FACTORY SELECTEO
PARTITYPICAL
VALUE
GIVEN
c
tFxo
cER
o.otuF
+80-20
roovDcr
c
IFXO
TI
4.?
PF
51
sOOVOcr
c
rFxD
cER
OrotuF
+80-20
toovocf,
c
tFxD
CER
O.OIUF
+80-20
loovDew
C
tFxO
c
tFxo
c
tFxo
ctFxo
c
tFxo
cER too
PF
los 500vocl
cER tuF 20r
25VDCf,
cER 0roluF
+80-20
roovDcw
cER
20 PF
lor TOOVOC|
cER
0.otuF
+80-20
toovocw
SEMICON
DEVICE
TDIOOE
SILICON
SEMICON
DEVICE
IOIODE
SILIEON
SEMICON
OEVICE
TP166g
SILICON
SEMICON
DEVICE'OIOOE
SILICON
DIOOE
BREAKDO|NTSILICON
SEHICON OEVICEIOIOOE
SILICON
sEtlteoN
oEvlcE
tDIooE
sILIcoN
YRANSTSTORTOUAL
N
CHAN
FET
TRANSISTOR
IOUAL
NPN SILICON
YRAN3ISTOR
TSILICON
PNP
2N'640
TRANSISTOR'SILICON
PNP 2N'64O
YRANSISTORI2NTO9 NPN
SILIeON
TRANSISTOR
l2N7O9
NPN
SILICOiT
RIFXD
R
IFXO
R
IFXO
R
IFXD
R
IFXO
TIET
FLM
82
OHM 25
IlEV
MET FL}t
TK
OHM
2I
L/8U
MET
FLl.l
IOK OHI{ 2r
L/81
MET
FLI,I
I2K OHI,I
2g
L/8Y
l.lET
FLl.l
4r?K
OHtl 2f
l/81
Rf FXO
ltET
FLM
t5K
OHH
2S
L/81
RIFXO
MET FLI.I
240
OHM
2g
L/EU
RIFXO
MET FLI,I
2,2K OHM 2I
I/AI
RIFXD
I,IET
FLI,I
I.IK
OHM
25
L/8I
02
349
-1
# See
list
ol crbbrevicrtions
in
introduction
to this section
4
-15