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Copyright © 2007 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3.5.5. GSM PAM (U501:TQM7M5003)
The TQM7M5003 is an extremely small (7 x 7 mm), GSM/EDGE PAM for handset
applications. This module has been optimized for excellent EDGE efficiency and Pout in a
Polar Loop environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency.
The small size and high performance is achieved with high-reliability 3
rd
generation InGaP HBT
technology. With 50Ω and output, no external matching or bias components are required. The module
incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. Each amplifier
has three gain stages with on-die inter-stage matching implemented with a high Q passives technology
for optimal performance. The CMOS controller implements a fully integrated power control within the
module for GSM operations, and serves as the AM/AM path in EDGE operations. This eliminates the
need for any external couplers, power detectors, current sensing etc., to assure the output power level.
The module has Tx enable and band select inputs. Module construction is a low-profile overmolded
landgrid array on laminate.
3. TECHNICAL BRIEF
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[Figure 1. 8] GSM PAM Schematic
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