Philips BLF278 - Page 12

2003 Sep 19 12
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.14 Input impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4Ω (per section); P
L
= 300 W.
handbook, halfpage
25 75 125
f (MHz)
175
2
1
Z
i
(Ω)
r
i
x
i
−1
−2
0
MGE685
Fig.15 Load impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4Ω (per section); P
L
= 300 W.
handbook, halfpage
25 75 125
f (MHz)
175
8
6
Z
L
(Ω)
X
L
R
L
2
0
4
MGE686
Fig.16 Definition of MOS impedance.
handbook, halfpage
MBA379
Z
i
Z
L
Fig.17 Power gain as a function of frequency;
typical values per section.
Class-B operation; V
DS
= 50 V; I
DQ
=2×0.1 A;
R
GS
=4Ω (per section); P
L
= 300 W.
handbook, halfpage
25
30
20
10
0
75 125 175
MGE687
f (MHz)
G
p
(dB)