Philips BLF278 - Page 14

2003 Sep 19 14
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.18 Power gain as a function of load power;
typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
=2×0.5 A; f = 225 MHz;
Z
L
= 0.74 + j2 Ω (per section); R
GS
= 2.8 Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0 100 200 300
20
0
10
MGE614
G
p
(dB)
P
L
(W)
(2)
(1)
Fig.19 Efficiency as a function of load power;
typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
=2×0.5 A; f = 225 MHz;
Z
L
= 0.74 + j2 Ω (per section); R
GS
= 2.8 Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0
60
40
η
D
(%)
20
0
100 200
P
L
(W)
300
MGE612
(2)
(1)
Fig.20 Load power as a function of input power;
typical values.
Class-AB operation; V
DS
= 50 V; I
DQ
=2×0.5 A; f = 225 MHz;
Z
L
= 0.74 + j2 Ω (per section); R
GS
= 2.8 Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0 5 10 15
400
300
100
0
200
MGE613
P
L
(W)
P
i
(W)
(1)
(2)