Philips BLF278 - Page 7

2003 Sep 19 7
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.9 Power gain as a function of load power;
typical values.
Class-B operation; V
DS
=50V;I
DQ
=2×0.1 A; f = 108 MHz;
Z
L
= 3.2 + j4.3 Ω (per section); R
GS
=4Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0
30
20
10
0
200 400 600
MGE682
P
L
(W)
G
p
(dB)
(1)
(2)
Fig.10 Efficiency as a function of load power;
typical values.
Class-B operation; V
DS
=50V;I
DQ
=2×0.1 A; f = 108 MHz;
Z
L
= 3.2 + j4.3 Ω (per section); R
GS
=4Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0 200 400
P
L
(W)
600
80
60
η
D
(%)
20
0
40
MGE683
(1)
(1)
(2)
(2)
Fig.11 Load power as a function of input power;
typical values.
Class-B operation; V
DS
=50V;I
DQ
=2×0.1 A; f = 108 MHz;
Z
L
= 3.2 + j4.3 Ω (per section); R
GS
=4Ω (per section).
(1) T
h
=25°C.
(2) T
h
=70°C.
handbook, halfpage
0
600
400
200
0
51015
MGE684
P
i
(W)
P
L
(W)
(1)
(2)