Samsung M471A5244CB0 - Overview of Memory Module Handling; Memory Module Introduction

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Recently module failure related with Active/Passive/Component crack has increased.
Main root causes are wrong handling method and mechanical damage.
Current products have more cap. & resistors and the sizes of those passives are reduced and most of them are located around edge
area.
These characteristics require more cautious module handling method.
This guide book tries to nd out tendency and range of module crack pattern based on experiments from several aspects. The main
purpose is to reinforce Samsung’s process control and help customer effectively control module handling process.
Test methods are PCB Bow, Twist, Drop Test, UTM(Universal Testing Machine) Test for DRAM, Resister & Capacitor. We observed
crack phenomena and tendency through the datum and pictures. Tested products are limited to Registered DIMM [RDIMM],
Unbuffered DIMM [UDIMM] and BOC PKG based Module, therefore test results might be different when applied to other products.
Overview
Memory Module Introduction
Unbuffered DIMM
Registered DIMM
Load Reduced DIMM
SODIMM