Sanyo VM-RZ1P Training Manual

2.
CAMERA
CIRCUIT
DESCRIPTION
2-1..
CCD
IMAGE
DEVICE
2-4-1. Outline
This
system
employs
a
1/3
inch
optical
size
interline
type
CCD
solid
image
device.
The
structure
and
characteristic
of
the
device
are
shown
below,
and
block
diagram
is
shown
in
Fig,
2-2.
{Structure]
*
Optical
size
1/3
inch
format
+ Interline type CCD image sensor
+
Effective
picture
elements
500(H)
x
582(V)
*
Picture
elements
in
total
537(H)
x
597(V)
*
Chip
size
6.3mm(H)
x
5.4mm(V)
+
Unit
cell
size
9.8
um(H)
x
6.3
um(V)
*
Optical
black
Horizontal(H)
direction
Front
7
picture
elements
Back 30 picture elements
Vertical (V) direction
Front 14 picture elements
Back 1 picture element
Horizontal 5.16
Vertical : 1(only in even fields)
+ Dummy bit number
GND SUB NC
Note —{~] Phote sensor
[Characteristic]
+
Field
accumulation
system
with
high
movement
resolution
+
Low
darkness
current,
high
sensitivity
sensor
*
Ye,
Cy,
Mg,
G
complementary
color
mosaic
filter
+
Horizontal
register
and
pre-charge
gate
5V
direct
drive
system
+ Low smear and low blooming
*
Variable
speed
electronic
shutter
function
Fig.
2-1.
Optical
Black
Location
(Top
view)
Fig. 2-2. CCD Block Diagram
2-1-2. V Register Operation
In
this
system,
V
register
size
is
made
compact
because
there
are
so
many
picture
elements.
So,
for
the
transfer
of
V
register,
4-phase
drive
system
with
a
large
dynamic
Tange
is
employed.
Though
the
drive
circuit
becomes
complex
according
to
4-phase
drive
system,
handling
electric
charge
per
electrode
is
large.
The
model
chart
of
the
4-phase
drive
is
shown
in
Fig.
2-3.
V
register
has
4
electrodes
(V1
to
V4),
in
step
@,
signal
electric
charge
is
in
the
well
of
electric
charge
of
V1
and
V2
because
the
electric
potential
is
high
in
V1
and
V2
and
low
in
V3
and
V4,
In
step
@,
electric
potential
of
V3
becomes
high
and
the
signal
electric
charge
spreads
through
the
well
of
electric
charge
of
V1,
V2
and
V3
because
the
electric
potential
of
V1
becomes
low.
Compared
with
step
@,
there
is
a
difference
of
1
electrode
(1
electrode
fransfer).
Direction of
transfer
oY
|
Fig.
2-3.
4-Phase
Drive
Model
Chart
22
2-1-3.
V
Register
Read
Operation
from
Light
Receiving
Section
This
system
employs
the
3-value
drive
V
register
as
shown
in
Fig.
2-4.
During
transfer
V
register,
the
applied
voltage
charge
on
the
V
register
electrode
is
low.
Therefore,
the
electric
charge
of
the
signal
cannot
get
out
from
the
light
receiving
section.
However,
since
the
electric
charge
during
reading
becomes
high,
the
electric
charge
of
the
signal
is
transferred
to
the
V
register.
Further
explanation
is
described
in
the
following.
Transfer
operation
to
the
V
register
from
the
light
receiving
section
in
odd
field
is
shown
in
Fig.
2-5.
In
Fig.
2-5,
V1
to
V4
change
as
shown
in
@
to
@.
When
each
of
V1
to
V4
is
-9V,
the
potential
of
the
V
register
becomes
a
barrier
and
it
becomes
well
when
they
are
OV.
The
potentials
of
Vi
and
V3
and
that
of
the
sensor
gate
become
the
lowest
well
in
the
conditions
of
@
and
©.
So,
the
signal
electric
charges
from
the
sensor
section
of
2n+1
(line)
and
2n(line)
move
to
V1
and
V3,
respectively.
The
signal
electric
charges
generated
at
@
between
two
adjacent
picture
elements
are
mixed
within
the
V
register,
and
transférred
as
shown
in
to@.
The
case
of
the
even
field
is
shown
in
Fig.
2-6,
The
difference
from
the
case
of
the
odd
field
is
that
a
combination
of
picture
elements
differs
when
mixing
the
signal
electric
charges
between
adjacent
picture
elements
at@.
Applied voltage =e
FP : ¥ Light beam
V register electrode Sensor electrode
! ates
j ao 1 Signal electric
fl ' charge
During 1 =~ ey
transfer t | ; © re) :
p~f--7¥ ! 1
1 (OO © 3 J
During read 1 f =
operation al J ‘When reading
P-Si
Light receiving
vay section
During read
operation
Direction of transfer
Fig. 2-4. 3-Value Drive Read

Sanyo VM-RZ1P Specifications

General

Brand	Sanyo
Model	VM-RZ1P
Category	Camcorder
Language	English