TM109902 (5/03) 3-9
USE OR DISCLOSURE OF DATA CONTAINED ON THIS PAGE IS SUBJECT TO THE
RESTRICTION ON THE TITLE PAGE OF THIS DOCUMENT.
C OMMAND S YSTEMS D IVISION
(2) False Alarm Check Paragraph 4.9.
(3) Receiver Tests Paragraph 4.10.
3.7 SEMICONDUCTOR SERVICE INFORMATION
A. Transistor Testing and Base Connection
Tables 3-1 and 3-2 provide typical testing data for PNP and NPN transistors.
NOTE
The information in Tables 3-1 and 3-2 is not
applicable for Darlington transistors.
Table 3-3 lists the transistors used in RT-1601. Column 2 references Figure 3-1 which shows a
base arrangement view of the transistor. Transistors having in-line leads must have leads formed
to the standard three pin socket configuration.
Table 3-1.
PNP Transistor Testing Procedure
OHMMETER CONNECTIONS
CHECK NO. BASE COLLECTOR EMITTER RANGE RELATIVE RESISTANCE
1 – +
RX100 or
RX1,000
Low (1,000 ohms or less)
2 + – RX10,000 High (100,000 ohms or more)
3 – + RX10,000 High (100,000 ohms or more)
4 + – RX10,000 High (100,000 ohms or more
5 – +
RX100 or
RX1,000
Low (1,000 ohms or less)
6 + – RX10,000 High (100,000 ohms or more)
7
Connect base
to collector
– +
RX100 or
RX1,000
Resistance should decrease from that
obtained in check 3.
8
Connect base
to emitter
– + RX10,000 High (100,000 ohms or more)
The document reference is online, please check the correspondence between the online documentation and the printed version.
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