6 Memory
[List Display for Vth Acquisition after Erase Operation]
Gate voltage Vgate
Drain current Idrain
[Test Output: X-Y Graph]
X axis: Number of write/erase cycles CycleList (LOG)
Y1 axis: Vth value after write operation on device 1 Dev1_VthWrittenList (LINEAR)
Y2 axis: Vth value after write operation on device 2 Dev2_VthWrittenList (LINEAR)
Y3 axis: Vth value after write operation on device 3 Dev3_VthWrittenList (LINEAR)
Y4 axis: Vth value after erase operation on device 1 Dev1_VthErasedList (LINEAR)
Y5 axis: Vth value after erase operation on device 2 Dev2_VthErasedList (LINEAR)
Y6 axis: Vth value after erase operation on device 3 Dev3_VthErasedList (LINEAR)
[Test Output: List Display]
Number of write/erase cycles CycleList
Vth value after write operation on device 1 Dev1_VthWrittenList
Vth value after write operation on device 2 Dev2_VthWrittenList
Vth value after write operation on device 3 Dev3_VthWrittenList
Vth value after erase operation on device 1 Dev1_VthErasedList
Vth value after erase operation on device 2 Dev2_VthErasedList
Vth value after erase operation on device 3 Dev3_VthErasedList
[Test Setup Details]
Refer to "NandFlash2 IV-Write-IV" and "NandFlash2 IV-Erase-IV."
Agilent EasyEXPERT Application Library Reference, Edition 8
6-12