Agilent Technologies EasyEXPERT - Page 163

6 Memory
6.10 NandFlash2 Vth(ErasingTimeDependence): NAND flash memory cell
erasing time dependence test (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the erasing time dependence test of the NAND-type flash memory cell, and plots the accumulated
erasing time (accumulated pulse width) vs threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
Connect the Control Gate to a SMU, and the Drain to the ASU2 Output.
Open the Floating Gate, and connect the other terminals to the ASU1 Output.
[Required Modules and Accessories]
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
HRSMU/ASU 2 sets (ASU1 and ASU2)
ASU1 connections: Output: Source and Substrate, SMU: HRSMU, AUX: PGU1
ASU2 connections: Output: Drain, SMU: HRSMU, AUX: PGU1
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Vs: Source voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
PulsePeriod: Erase pulse period
PulseDelay: Erase pulse delay
PulseWidth: Total accumulated pulse width
CheckNoOfTimes: Number of Vth measurement operation
Verase: Erase pulse output level
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
[Extended Test Parameter]
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
BaseValue: Erase pulse base value
Agilent EasyEXPERT Application Library Reference, Edition 8
6-23