Agilent Technologies EasyEXPERT - Page 189

6 Memory
6.23 NorFlash Endurance: NOR flash memory cell endurance test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the endurance test for the NOR type flash memory cell and plots the number of write/erase operation
vs threshold voltage characteristics.
[Device Under Test]
NOR-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 2 units
Selector (16440A/16445A 2 sets or HRSMU/ASU 3 sets)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Pdrain: SPGU channel connected to Drain terminal via Selector
Psource: SPGU channel connected to Source terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalWriteAndEraseCycles: Total number of write/erase operation
WritePeriod: Write pulse period
WriteGateDelay: Gate write pulse delay
WriteGateWidth: Gate write pulse width
WriteGateVwrite: Gate write pulse output level
WriteGateLeadingTime: Gate write pulse leading edge transition time
WriteGateTrailingTime: Gate write pulse trailing edge transition time
WriteDrainDelay: Drain write pulse delay
WriteDrainWidth: Drain write pulse width
WriteDrainVwrite: Drain write pulse output level
WriteDrainLeadingTime: Drain write pulse leading edge transition time
WriteDrainTrailingTime: Drain write pulse trailing edge transition time
ErasePeriod: Erase pulse period
EraseGateDelay: Gate erase pulse delay
EraseGateWidth: Gate erase pulse width
EraseGateVerase: Gate erase pulse output level
EraseGateLeadingTime: Gate erase pulse leading edge transition time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-49