6 Memory
EraseGateTrailingTime: Gate erase pulse trailing edge transition time
EraseSourceDelay: Source erase pulse delay
EraseSourceWidth: Source erase pulse width
EraseSourceVerase: Source erase pulse output level
EraseSourceLeadingTime: Source erase pulse leading edge transition time
EraseSourceTrailingTime: Source erase pulse trailing edge transition time
MeasTiming: Timing to perform Vth measurement
[Extended Test Parameters]
Vs: Source voltage
Vsub: Substrate voltage
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
BaseValue: Pulse base value
DrainMinRng: Minimum range of drain current measurement
[Measurement Parameters]
Drain current Idrain
[Analysis Function]
Vth@Id=@L1X (X intercept of Line1)
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Drain current Idrain (LOG)
[List Display]
Gate voltage Vgate
Drain current Idrain
[Test Contents: Auto Analysis]
Line1: Vertical line for Y1 at Idrain=Id@Vth
[Test Output: X-Y Graph]
X axis: Number of write/erase cycles CycleList (LOG)
Y1 axis: Threshold voltage after write VthWrittenList (LINEAR)
Y2 axis: Threshold voltage after erase VthErasedList (LINEAR)
[Test Output: List Display]
Number of write/erase cycles CycleList
Threshold voltage after write VthWrittenList
Threshold voltage after erase VthErasedList
[Test Setup Details]
See NorFlash IV-Write-IV and NorFlash IV-Erase-IV.
TotalWriteAndEraseCycles should be 10, 100, 1000, 10000, 100000, or 1000000.
Agilent EasyEXPERT Application Library Reference, Edition 8
6-50
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