Agilent Technologies EasyEXPERT

6 Memory
6.33 NorFlash DataDisturb(WrittenCell): NOR flash memory cell Data disturb
test after Write (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the data disturb test of the NOR-type flash memory cell after the write operation, and plots the
accumulated stress time vs threshold voltage characteristics.
[Device Under Test]
NOR-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 1 set or HRSMU/ASU 2 set)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Pdrain: SPGU channel connected to Drain terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
VdStress: Stress voltage for Drain terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
PulsePeriod: Write pulse period
GateDelay: Gate write pulse delay
GateWidth: Gate write pulse width
GateVwrite: Gate write pulse output level
GateLeadingTime: Gate pulse leading edge transition time
GateTrailingTime: Gate pulse trailing edge transition time
DrainDelay: Drain write pulse delay
DrainWidth: Drain write pulse width
DrainVwrite: Drain write pulse output level
DrainLeadingTime: Drain pulse leading edge transition time
DrainTrailingTime: Drain pulse trailing edge transition time
TotalStressTime: Total accumulated stress time
CheckNoOfTimes: Number of Vth measurement operation
[Extended Test Parameters]
Vs: Source voltage
Agilent EasyEXPERT Application Library Reference, Edition 8
6-69