8 NanoTech
8.5 CNT Id-Vg: Carbon Nano Tube FET Id-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the drain current vs gate voltage characteristics of Carbon Nano Tube FET.
[Device Under Test]
Carbon Nano Tube FET, 4 terminals
[Device Parameters]
Polarity: Forward (SMUs force the specified value) or Reverse (SMUs force the negative specified value).
L: CNT length
D: CNT diameter
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
BackGate: SMU connected to Backgate, primary sweep voltage output
VbgStart: Sweep start voltage for Backgate
VbgStop: Sweep stop voltage for Backgate
VbgStep: Sweep step voltage for Backgate
IgLimit: Backgate current compliance
Drain: SMU connected to Drain, secondary sweep voltage output
VdStart: Sweep start voltage for Drain
VdStop: Sweep stop voltage for Drain
VdStep: Sweep step voltage for Drain
SideGate: SMU connected to Sidegate, constant voltage output
Source: SMU connected to Source, constant voltage output
[Extended Test Parameters]
Vsg: Sidegate voltage
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
[Measurement Parameters]
Drain current Idrain
[X-Y Plot]
X axis: Backgate voltage Vbackgate (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)
Y2 axis: Drain current Idrain (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
8-9
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