8 NanoTech
8.6 CNT Id-Vg-Time: CNT FET Ig-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4156B, 4156C
[Description]
Measures the Id-Vg characteristics of CNT FET repeatedly at a specified interval until specified time elapses.
This test is designed to use a gate electrode as a sensor and consider the adsorption of DNA and antibody to the
gate electrode as a change in Ids. Used for evaluation of a time change in characteristics.
[Device Under Test]
Carbon Nano Tube FET, 4 terminals
[Device Parameters]
Polarity: Forward (SMUs force the specified value) or Reverse (SMUs force the negative specified value)
L: CNT length
D: CNT diameter
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Drain: SMU connected to Drain, primary sweep voltage output
VdStart: Sweep start voltage for Drain
VdStop: Sweep stop voltage for Drain
VdStep: Sweep step voltage for Drain
BackGate: SMU connected to Back Gate, secondary sweep voltage output
VbgStart: Sweep start voltage for Back Gate
VbgStop: Sweep stop voltage for Back Gate
VbgStep: Sweep step voltage for Back Gate
SideGate: SMU connected to Side Gate, constant voltage output
Vsg: Side Gate voltage
Source: SMU connected to Source, constant voltage output
T1Stop: T1 stop time
T1Step: T1 step time
T2Stop: T2 stop time
T2Step: T2 step time
[Extended Test Parameters]
Vs: Source voltage
IbgLimit: Back Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for drain current measurement
[Measurement Parameters]
Drain current Idrain
Time ACC_TIME
ACC_TIME is displayed after adding the sum of T1Step (or T2Step) and the actual measurement time.
ACC_TIME = ACC_TIME + T1Step (or T2Step) + Id-Vg measurement time
[User Function]
ACC_TIME: Elapsed time
Agilent EasyEXPERT Application Library Reference, Edition 8
8-10