11 Reliability
11.13 Charge Pumping: Evaluation of the interface state using charge pumping
method (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the Substrate current vs Gate pulse base voltage characteristics, and extracts the interface state
density (Nss). This test uses the Agilent 81110A pulse generator.
[Test Setup used in this test definition]
ForcePGC: Used to apply Gate pulse
I/V-t Sampling: Used to perform the Substrate current measurement
ResetPG: Used to reset the pulse generator
[Device Under Test]
MOSFET, 3 terminals or 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Source: SMU connected to Source, constant voltage output
Vs: Source voltage
IsLimit: Source current compliance
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
IsubsLimit: Substrate current compliance
[Extended Test Parameters]
SubsMinRng: Minimum range for the substrate current measuremnent
[Test Parameters for Gate Pulse]
PulseLevel: Pulse output level
VbaseStart: Sweep start value of Gate pulse base voltage
VbaseStop: Sweep stop value of Gate pulse base voltage
VbaseStep: Sweep step value of Gate pulse base voltage
PulsePeriod: Pulse period
PulseDelay: Pulse delay
DutyCycle: Duty cycle
LeadingTime: Leading transition time
TrailingTime: Trailing transition time
PgAdd: GPIB address of Agilent 81110A
[Test Output: X-Y Graph]
X axis: Gate pulse base voltage VbaseList (LINEAR)
Y1 axis: Substrate current IcpList (LOG)
[Test Output: Parameters]
Interface state density Nss
[Nss calculation]
Nss=IcpMax/q*PulsePeriod/Lg/Wg
Agilent EasyEXPERT Application Library Reference, Edition 8
11-39
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