11 Reliability
11.14 Charge Pumping2: Evaluation of the interface state using charge pumping
method (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Measures the Substrate current vs Gate pulse base voltage characteristics, and extracts the interface state
density (Nss).
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
[Device Under Test]
MOSFET, 3 terminals or 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
Source: SMU connected to Source, constant voltage output
Subs: SMU connected to Substrate, constant voltage output
Gate: SPGU connected to Gate, pulse voltage output
PulsePeriod: Pulse period
PulseDelay: Pulse delay
DutyCycle: Duty cycle
PulseLevel: Pulse output level
LeadingTime: Leading transition time
TrailingTime: Trailing transition time
VbaseStart: Sweep start value of Gate pulse base voltage
VbaseStop: Sweep stop value of Gate pulse base voltage
VbaseStep: Sweep step value of Gate pulse base voltage
Vs: Source voltage
IsubsLimit: Substrate current compliance
IntegTime: Integration time
Vsubs: Substrate voltage
IsLimit: Source current compliance
[Extended Test Parameters]
SubsMinRng: Minimum range for the substrate current measuremnent
[Measurement Paramaters]
Isubs Substrate current
[X-Y Graph]
X axis: Elapsed time Time (LINEAR)
Y1 axis: Substrate current Isubs (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
11-40