11 Reliability
11.28 HCI: Hot Carrier Injection test, 4 terminals (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the hot carrier injection test, and plots the accumulated stress time vs threshold voltage/drain current
characteristics.
This test is performed as follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
TotalStressTime: Total stress time
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
VgStress: Gate terminal stress voltage
VdStress: Drain terminal stress voltage
VsubsStress: Substrate terminal stress voltage
Vsubs: Substrate terminal voltage
[Test Parameters for IvSweep_ConstId]
Id@Vth: Drain current to decide the Vth, per unit area
VgStart1: Sweep start voltage for Gate terminal
VgStop1: Sweep stop voltage for Gate terminal
VgStep1: Sweep step voltage for Gate terminal
Vd1: Drain terminal voltage, constant value
[Test Parameters for IvSweep_gmmax]
VgStart2: Sweep start voltage for Gate terminal
VgStop2: Sweep stop voltage for Gate terminal
VgStep2: Sweep step voltage for Gate terminal
Vd2: Drain voltage
[Test Parameters for Sampling_Ids]
Vg3: Gate terminal voltage
Vd3: Drain terminal voltage
[Extended Test Parameters]
Agilent EasyEXPERT Application Library Reference, Edition 8
11-66
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