11 Reliability
11.41 TZDB: TZDB Test of oxide layer (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the TZDB (time zero dielectric breakdown) test, and plots the current vs voltage characteristics.
[Device Under Test]
MOS capacitor, oxide layer, and so on
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate, primary sweep, voltage output
VgStart: Sweep start voltage
VgStop: Sweep stop voltage
VgStep: Sweep step voltage
IgLimit: Gate current compliance
Subs: SMU connected to Substrate, constant voltage output
[Extended Test Parameters]
Vsubs: Substrate voltage
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum range for the gate current measurement
SubsMinRng: Minimum range for the substrate current measurement
[User Function]
IgatePerArea=Igate/L/W
IsubsPerArea=Isubs/L/W
[X-Y Plot]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Gate current Igate (LOG)
Y2 axis: Gate current per unit area IgatePerArea (LOG)
Agilent EasyEXPERT Application Library Reference, Edition 8
11-91
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