AN8849SB
■ Electrical Characteristics at T
a
= 25°C (continued)
Parameter Symbol Conditions Min Typ Max Unit
NRF detection
NRF det. detection level V
RDA1
f = 500 kHz, V
GC
= V
REF2
− 0.75 V 73 105 137 mV[p-p]
NRF det. high-level output V
RDAH
f = 500 kHz, V
GC
= V
REF2
− 0.75 V 4.2 V
voltage
NRF det. low-level output V
RDAL
f = 500 kHz, V
GC
= V
REF2
− 0.75 V 0.8 V
voltage
NRF det. detection level ratio B
RDA
f = 500 kHz, V
GC
= V
REF2
2.9 3.9 4.9
BDO
CBDO detection current I
BDO
V
CC1
= 5 V, V
CC2
= 3.3 V 0.98 1.40 1.82 µA
EQSW = V
REF2
− 0.5 V
CBDO detection current ratio B
IBD4
V
CC1
= 5 V, V
CC2
= 3.3 V 3.0 3.8 4.6
EQSW = V
REF2
BDO high-level output voltage V
BDOH
V
CC1
= 5 V, V
CC2
= 3.3 V 4.2 V
f = 5 kHz, rectangular wave
BDO low-level output voltage V
BDOL
V
CC1
= 5 V, V
CC2
= 3.3 V 0.8 V
f = 5 kHz, rectangular wave
OFTR
COFTR detection current I
OFTR
V
CC1
= 5 V, V
CC2
= 3.3 V 0.98 1.40 1.82 µA
EQSW = V
REF2
− 0.5 V
COFTR detection current ratio B
IOFTR4
V
CC1
= 5 V, V
CC2
= 3.3 V 3.0 3.8 4.6
EQSW = V
REF2
OFTR high-level output voltage V
OFTRH
V
CC1
= 5 V, V
CC2
= 3.3 V 4.2 V
f = 5 kHz, rectangular wave
OFTR low-level output voltage V
OFTRL
V
CC1
= 5 V, V
CC2
= 3.3 V 0.8 V
f = 5 kHz, rectangular wave
Masking operating voltage 1 V
MASK1
f = 40 kHz, V
IN
= 100 mV[p-p] 0.35 V
Masking operating voltage 2 V
MASK2
f = 40 kHz, V
IN
= 100 mV[p-p] 0.65 V
3TENV
CEA to ENV
G
CEA−ENV
V
CC1
= 5 V, V
CC2
= 3.3 V 20.0 23.0 26.0 dB
transfer characteristics
CEA input impedance Z
CEA
V
CC1
= 5 V, V
CC2
= 3.3 V 6.8 8.8 10.8 kΩ
ENV amp. output impedance Z
ENV
V
CC1
= 5 V, V
CC2
= 3.3 V 6.4 8.4 10.4 kΩ
ENV amp. offset voltage V
ENVOF
V
CC1
= 5 V, V
CC2
= 3.3 V −100 0 100 mV
ENV amp. operation V
ENV
V
CC1
= 5 V, V
CC2
= 3.3 V 270 540 810 mV[p-p]
f = 800 kHz, AM modulation
LD APC
LD operating reference voltage V
LD
V
CC1
= 5 V, V
CC2
= 3.3 V 135 170 205 mV
LDON operating voltage V
LDON
V
CC1
= 5 V, V
CC2
= 3.3 V − 0.35 V
HD750
26