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LG KE820 - In-Call Menu; During a Call; Making a Second Call (Network Dependent); Answering an Incoming Call

LG KE820
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3. TECHNICAL BRIEF
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3.6. Memory
256Mbit Flash & 128Mbit SDRAM employed on KE820/KG99 with 16 bit parallel data bus thru
ADD(0)~ ADD(24). The 256Mbit Sibley Wireless Flash memory with LPSDRAM stacked device family
offers multiple high-performance solutions. The Sibley flash die is manufactured on 90 nm process
technology. It delivers 108 MHz synchronous burst and page-mode read rates with supports multi-
partitioning with Read-While-Write (RWW) or Read-While-Erase (RWE) dual operations. The
LPSDRAM is a high-performance volatile memory operating at speeds up to 104 MHz with
configurable burst lengths.
Figure 11 Flash memory & SDRAM MCP circuit diagram

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