En-31
English
DRAM Timing Mode
Setting to [Auto] enables the advance memory timing automatically to be determined
by BIOS. Setting to [Manual] allows you to set advanced memory timings.
CAS Latency (CL)
When the DRAM Timing Mode sets to [Manual], the field is adjustable. This
controls the CAS latency, which determines the timing delay (in clock cycles)
before SDRAM starts a read command after receiving it.
tRCD
When the DRAM Timing Mode sets to [Manual], the field is adjustable. When
DRAM is refreshed, both rows and columns are addressed separately. This
setup item allows you to determine the timing of the transition from RAS (row
address strobe) to CAS (column address strobe). The less the clock cycles, the
faster the DRAM performance.
tRP
When the DRAM Timing Mode sets to [Manual], the field is adjustable. This
setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to pre-charge. If insufficient time is allowed for the RAS to accumulate
its charge before DRAM refresh, refresh may be incomplete and DRAM may fail
to retain data. This item applies only when synchronous DRAM is installed in the
system.
tRAS
When the DRAM Timing Mode sets to [Manual], the field is adjustable. This
setting determines the time RAS takes to read from and write to memory cell.
TRTP
When the DRAM Timing Mode sets to [Manual], the field is adjustable. Time
interval is between a read and a pre-charge command.
TRFC
When the DRAM Timing Mode sets to [Manual], the field is adjustable. This
setting determines the time RFC takes to read from and write to a memory cell.
TWR
When the DRAM Timing Mode sets to [Manual], the field is adjustable. Minimum
time interval between end of write data burst and the start of a pre-charge
command. Allows sense amplifiers restore data to cells.
TRRD
When the DRAM Timing Mode sets to [Manual], the field is adjustable. Specifies
the active-to-active delay for different banks.
TWTR
When the DRAM Timing Mode sets to [Manual], the field is adjustable. Minimum
time interval between the end of write data burst and the start of a column-read
command. It allows I/O gating to overdrive sense amplifiers before read com-
mand starts.
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