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ON Semiconductor MC33067 - Page 13

ON Semiconductor MC33067
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MC34067, MC33067
http://onsemi.com
13
Inductance = 1.8 Hμ
MBR2535
330pF
100pF
16k
1.6k
330pF
1500pF
220pF
0.01
10k
1.1k
2.7k
18k
10
V
CC
15
9
1
2
16
3
6
8
7
11
4
Reference
5
14
13
12
10
470pF
470
3.9k
1N5819
T2
MTP33N10E
100
1.0
1.0
T3
1.0k
1.0k
100
1N5819 x 4
V
in
500pF
51/0.5W
CTL
230
V
out
L1 L2
Figure 22. Application Circuit
Line Regulation
Load Regulation
Output Ripple
Efficiency
Test Conditions Results
V
in
= 40 V to 56 V, I
O
=15 A
V
in
= 48 V, I
O
= 10 A to 15 A
V
in O
= 48 V, I = 15 A, f
20 mV =
switch
= 1.0 MHz
V
in O
= 48 V, I = 10 A, f
switch
= 1.7 MHz
V
in O
= 48 V, I = 15 A, f
switch
= 1.0 MHz
±0.198%
4.0 mV = ±0.039%
25 mV
pp
83.5%
84.2%
T1 = Primary: 12 turns #48 AWG (1300 strands litz wire)
Secondary: 6 turns center tapped #48 AWG (1300 strands litz wire)
Core: Philips 3F3 4312 020 4124
Bobbin: Philips 4322 021 3525
Primary Leakage Inductance = 1.0 Hμ
T2 = All windings: 8 turns #36 AWG
Core: Philips 3F3 EP73F3
Bobbin: Philips EP7PCB16
T3 = Coilcraft D1870 (100 turns)
L1 = 2 turns #48 AWG (1300 strands litz wire)
Core: Philips 3F3 EP103F3
Bobbin: Philips EP10PCB18
L2 = 5 turns #48 AWG (1300 strands litz wire)
Core: 0.5
Inductance = 100 nH
diameter air code
Heatsinks = AAVID Engineering Inc. 533402B02552 with clip
MC340675803
Insulators = Berquist SilPad 1500
5.0 V
36 V to 56 V
T1
1N5819
500pF
51/0.5W
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